Radio Frequency Transistors - In this context, the thermal stability of both Ag and Cu films with Ta and Ta N films as diffusion barriers and/or surface-capping layers at hh temperatures up to 800 C is investated in this thesis. ST offers a broad portfolio of RF LDMOS and DMOS power transistors for applications ranging from 1 MHz to 2 GHz, such as commercial and public safety, FM broadcast.
Hot Carrier Effect On Ldmos Transistors - STARS - University of. Neither the Standard Gummel-Poon nor the new VBIC95 BJT models are suitable for application to the parasitic bipolar effects in a LDMOSFET or LDMOS device. Electronic Theses and Dissertations. Doctoral Dissertation Open Access. Hot Carrier Effect On Ldmos Transistors. 2007. Liangjun Jiang. University of Central.
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